Defects and Impurities in Silicon Materials - An Introduction to Atomic-Level Silicon Engineering
Reduzierte Artikel in dieser Kategorie
| Verlag | Springer |
| Auflage | 2016 |
| Seiten | 487 |
| Format | 15,5 x 2,3 x 23,5 cm |
| Gewicht | 848 g |
| Artikeltyp | Englisches Buch |
| Reihe | Lecture Notes in Physics 916 |
| EAN | 9784431557999 |
| Bestell-Nr | 43155799JA |
This book emphasizesthe importance of the fascinating atomistic insights into the defects and theimpurities as well as the dynamic behaviors in silicon materials, which havebecome more directly accessible over the past 20 years. Such progress has beenmade possible by newly developed experimental methods, first principle theories,and computer simulation techniques.
The book is aimed at young researchers, scientists, and technicians in related industries. The mainpurposes are to provide readers with 1) the basic physics behind defects insilicon materials, 2) the atomistic modeling as well as the characterizationtechniques related to defects and impurities in silicon materials, and 3) anoverview of the wide range of the research fields involved.
Inhaltsverzeichnis:
Diffusion and point defects in silicon materials.- Density functional modeling of defects and impurities in silicon materials.- Electrical and optical defect evaluation techniques for electronic and solar grade silicon.- Intrinsic point defect engineering during single crystal Si and Ge growth from a melt.- Computer simulation of crystal growth for CZ-Si single crystals and Si solar cells.- Oxygen precipitation in silicon.- Defect characterization by electron beam induced current and cathode luminescence methods.- Nuclear methods to study defects and impurities in Si materials using heavy ion accelerators.- Defect Engineering in silicon materials.